MG400V2YS60A 2002-09-25 1 toshiba igbt module silicon n channel igbt MG400V2YS60A high power switching applications motor control applications the electrodes are isolated from case. enhancement ? mode thermal output terminal (th) equivalent circuit th1 th2 g1 fo1 e1 g2 fo2 e2 e2 e1/c2 c1 unit in mm jedec eiaj toshiba 2 ? 126a1a weight : 680 g
MG400V2YS60A 2002-09-25 2 maximum ratings (ta = 25c) characteristic symbol rating unit collector emitter voltage v ces 1700 v gate emitter voltage v ges 20 v collector current dc i c 400 a forward current dc i f 400 a collector power dissipation (tc = 25c) p c 4300 w junction temperature t j 150 c storage temperature range t stg 40~125 c isolation voltage v isol 4000 (ac 1 min) v terminal: m8 D 10 n ? m screw torque mounting: m5 D 3 n ? m electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit gate leakage current i ges v ge = 20v, v ce = 0v D D 10 a collector cut off current i ces v ce = 1700v, v ge = 0v D D 1 ma gate emitter cut off voltage v ge(off) i c = 400ma, v ce = 5v D 5.5 D v t j = 25c D 3.0 3.4 collector emitter saturation voltage v ce(sat) i c = 400a v ge = 15v t j = 125c D 3.8 4.2 v input capacitance c ies v ce = 10v, v ge = 0v, f = 1mhz D 45000 D pf gate emitter voltage v ge D 13 15 17 v gate resistance r g D 8.2 D 15 ? turn on delay time t d(on) D 0.35 D rise time t r D 0.2 D turn on time t on D 0.55 D turn off delay time t d(off) D 0.9 D fall time t f D 0.4 0.6 switching time turn off time t off inductive load v cc = 900v i c = 400a v ge = 15v r g = 8.2 ? (note) D 1.3 D s t j = 25c D 3.2 4.2 forward voltage v f i f = 400a, v ge = 0v t j = 125c D 2.4 D v reverse recovery time t rr i f = 400a, v ge = 15v di/dt = 2000a/s D 0.20 0.40 s transistor stage D D 0.029 thermal resistance r th(j c) diode stage D D 0.056 c / w rtc operating current i rtc t j = 25c 800 D D a
MG400V2YS60A 2002-09-25 3 thermistor characteristic symbol test condition min. typ. max. unit zero power resistance r25 tc 25c D 100 D k ? b value r25 / 85 tc 25c / tc 85c D 4390 D k isolation voltage tc 25c 2500 D D vrms (note) : switching time measurement circuit and input / output waveforms v ge r g r g i c i f v ce l v cc v ge i c t d(off) 0 0 90% 90% 90% 10% 10% 10% t off t d(on) t on t f t r t rr
MG400V2YS60A 2002-09-25 4 0 10 30 20 i c ? v ce collector-emitter voltage v ce (v) collector current i c (a) 0 800 600 400 200 2 4 6 8 10 common emitter tj = 25c v ge = 8v 9 10 20 12 15 v ce ? v ge gate-emitter voltage v ge (v) collector-emitter voltage v ce (v) 12 0 0 4 10 6 4 8 12 20 8 16 2 common emitter tj = 25c 800 400 i c = 200a i c ? v ce collector-emitter voltage v ce (v) collector current i c (a) 0 800 600 400 200 2 4 6 8 10 common emitter tj = 125c v ge = 8v 9 10 20 12 15 v ce ? v ge gate-emitter voltage v ge (v) collector-emitter voltage v ce (v) 12 0 0 4 10 6 4 8 12 20 8 16 2 common emitter tj = 125c 800 400 i c = 200a c ? v ge gate-emitter voltage v ge (v) collector current i c (a) tj = 25c 125 common emitter v ce = 5v
MG400V2YS60A 2002-09-25 5 i f ? v f forward voltage v f (v) forward current i f (a) 1000 0 800 600 400 200 1 2 3 4 5 common cathode v ge = 0 125 tj = 25c v ce , v ge ?q g charge q g (nc) collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) 1000 0 800 600 500 1000 1500 2000 400 200 20 0 16 12 8 4 common emitter r l = 2.25 tj = 25c v ce = 0 900 600 300 gate resistance r g ( ) switching loss ? r g switching loss (mj) 10000 100 6 1000 12 16 8 10 14 common emitter v cc = 900v v ge = 15v i c = 400a : tj = 25c : tj = 125c e off e on switching loss ? i c collector current i c (a) switching loss (mj) 1000 10 0 200 300 400 100 100 common emitter v cc = 900v v ge = 15v r g = 8.2 : tj = 25c : tj = 125c e off e on switching time ? i c collector current i c (a) switching time ( s) 10000 10 0 100 200 300 400 1000 100 common emitter v cc = 900v v ge = 15v : tj = 25c r g = 8.2 : tj = 125c t off t d(off) t f t on t d(on) t r gate resistance r g ( ) switching time ? r g switching time ( s) 10000 100 6 1000 12 16 8 10 14 t off t d(off) t on t d(on) t r t f common emitter v cc = 900v v ge = 15v : tj = 25c i c = 400a : tj = 125c
MG400V2YS60A 2002-09-25 6 gate resistance r g ( ) short circuit t w ? r g pulse width t w (s) 16 0 12 8 4 4 8 12 16 e dsw ? i f forward crrent i f (a) reverse recovery loss e dsw (mj) 100 1 0 200 300 400 10 100 common cathode di / dt = 2000a / s v ge = 10v v cc = 900v : tj = 25c : tj = 125c r th(j-c) ? t w pulse width t w (s) transient thermal resistance r th(j-c) ( c / w ) 1 0.0005 0.001 0.01 0.1 10 0.01 1 0.1 0.001 tc = 25c diode stage transistor stage short circuit soa collector-emitter voltage v ce (v) collector current i c (a) 10000 10 0 100 1200 1600 2000 1000 800 400 v cc = 900v r g = 8.2 v ge = 15v t w Q 10 s tj Q 125c v cc = 1200v v ge = 15v tj = 125c t rr , i rr ? i f peak reverse recovery current i rr (a) reverse recovery time t rr (ns) forward crrent i f (a) 1000 10 0 200 300 400 100 100 t rr i rr common cathode di / dt = 2000a / s v ge = 10v v cc = 900v : tj = 25c : tj = 125c c ? v ce collector-emitter voltage v ce (v) capacitance c (pf) 100000 300 0.1 3000 30000 1000 3 10 100 1 30 10000 0.3 c ies c oes c res common emiter v ge = f = 1mhz tj = 25c
MG400V2YS60A 2002-09-25 7 reverse bias soa collector?emitter voltage v ce (v) collector current i c (a) 1000 10 0 800 1200 1600 100 400 2000 tj Q 125c v ge = 15v r g = 8.2
MG400V2YS60A 2002-09-25 8 v ce(sat) v f rank symbol min. max. rank symbol min max. 29 2.6 2.9 g 2.5 2.8 30 2.7 3.0 h 2.7 3.0 31 2.8 3.1 i 2.9 3.2 32 2.9 3.2 j 3.1 3.4 33 3.0 3.3 k 3.3 3.6 34 3.1 3.4 l 3.5 3.8 m 3.7 4.0 n 3.9 4.2 toshiba mg400v2ys60 a 23f 22g hl
MG400V2YS60A 2002-09-25 9 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
|
